Invention Grant
- Patent Title: Catalyst influenced chemical etching for fabricating three-dimensional SRAM architectures
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Application No.: US16872651Application Date: 2020-05-12
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Publication No.: US11355397B2Publication Date: 2022-06-07
- Inventor: Sidlgata V. Sreenivasan , Akhila Mallavarapu , Jaydeep Kulkarni , Michael Watts , Sanjay Banerjee
- Applicant: Board of Regents, The University of Texas System
- Applicant Address: US TX Austin
- Assignee: Board of Regents, The University of Texas System
- Current Assignee: Board of Regents, The University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Shackelford, Bowen, McKinley & Norton, LLP
- Agent Robert A. Voigt, Jr.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/786 ; H01L29/66 ; H01L27/088 ; H01L27/11 ; H01L21/3065 ; H01L29/423 ; H01L21/306
Abstract:
A method for fabricating a three-dimensional (3D) static random-access memory (SRAM) architecture using catalyst influenced chemical etching (CICE). Utilizing CICE, semiconductor fins can be etched with no etch taper, smooth sidewalls and no maximum height limitation. CICE enables stacking of as many nanosheet layers a desired and also enables a 3D stacked architecture for SRAM cells. Furthermore, CICE can be used to etch silicon waveguides thereby creating waveguides with smooth sidewalls to improve transmission efficiency and, for photon-based quantum circuits, to eliminate charge fluctuations that may affect photon indistinguishability.
Information query
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