Invention Grant
- Patent Title: Power semiconductor module
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Application No.: US16960426Application Date: 2019-01-11
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Publication No.: US11355419B2Publication Date: 2022-06-07
- Inventor: Ik-Seong Park
- Applicant: AMOSENSE CO., LTD.
- Applicant Address: KR Cheonan-si
- Assignee: AMOSENSE CO., LTD.
- Current Assignee: AMOSENSE CO., LTD.
- Current Assignee Address: KR Cheonan-si
- Agency: Brooks, Cameron & Huebsch, PLLC
- Priority: KR10-2018-0003978 20180111
- International Application: PCT/KR2019/000437 WO 20190111
- International Announcement: WO2019/139394 WO 20190718
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/433 ; H01L23/498 ; H01L23/00 ; H01L23/367

Abstract:
The present invention relates to a power semiconductor module including a first heat dissipation substrate, a semiconductor chip, a lead plate, a PCB, and a heat dissipation plate that are packaged within a casing, wherein dualization of a heat dissipation structure is applied to facilitate superior heat dissipation performance compared to a conventional power semiconductor module.
Public/Granted literature
- US20200335422A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2020-10-22
Information query
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