Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US16945429Application Date: 2020-07-31
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Publication No.: US11355426B2Publication Date: 2022-06-07
- Inventor: Wen Hung Huang , Min Lung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H01L23/498 ; H01L21/48 ; H05K1/03 ; H05K1/18

Abstract:
A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are substantially arranged in a row and spaced apart from one another. The conductive through via extends through the dam portions.
Public/Granted literature
- US20220037242A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-02-03
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