A semiconductor structure includes a first layer, a second layer, a first interconnection layer, and a second interconnection layer. The first layer includes an upper electrode pattern, and the second layer includes a lower electrode pattern, wherein the upper electrode pattern is opposite to the lower electrode pattern. The first interconnection layer includes a plurality of first interconnect structures electrically connected on the upper electrode pattern. The second interconnection layer includes a plurality of second interconnect structures electrically connected on the lower electrode pattern. The first interconnect structures on the upper electrode pattern are hybrid bonded with the second interconnect structures on the lower electrode pattern. Therefore, the upper electrode patterns and the lower electrode patterns are joined by hybrid bonding to form a capacitor element.