Invention Grant
- Patent Title: Semiconductor device including glass substrate having improved reliability and method of manufacturing the same
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Application No.: US16753193Application Date: 2018-09-27
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Publication No.: US11355465B2Publication Date: 2022-06-07
- Inventor: Shun Mitarai , Shusaku Yanagawa
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-197727 20171011
- International Application: PCT/JP2018/035840 WO 20180927
- International Announcement: WO2019/073801 WO 20190418
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L21/56 ; H01L23/498
Abstract:
The present technology relates to a semiconductor device and a method of manufacturing the same capable of improving reliability of a glass substrate on which a wiring layer is formed. A semiconductor device is provided with a glass substrate on a front surface or front and back surfaces of which a wiring layer including one or more layers of wiring is formed, an electronic component arranged inside a glass opening formed on the glass substrate, and a redistribution layer that connects the wiring of the glass substrate and the electronic component. The present technology is applicable to, for example, a high-frequency front-end module and the like.
Public/Granted literature
- US20200321301A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-10-08
Information query
IPC分类:
