Invention Grant
- Patent Title: Semiconductor devices including thick pad
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Application No.: US16983296Application Date: 2020-08-03
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Publication No.: US11355467B2Publication Date: 2022-06-07
- Inventor: Taeho Ko , Daehee Lee , Hyunchul Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0005173 20200115
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00

Abstract:
A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.
Public/Granted literature
- US20210217720A1 SEMICONDUCTOR DEVICES INCLUDING THICK PAD Public/Granted day:2021-07-15
Information query
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