- Patent Title: Array substrate, manufacturing method thereof, and display device
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Application No.: US16616980Application Date: 2019-08-23
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Publication No.: US11355519B2Publication Date: 2022-06-07
- Inventor: Chunhsiung Fang , Yuanchun Wu , Poyen Lu
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Priority: CN201910368677.3 20190505
- International Application: PCT/CN2019/102163 WO 20190823
- International Announcement: WO2020/224095 WO 20201112
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/40 ; H01L29/49 ; H01L29/66 ; H01L29/786 ; G02F1/1368 ; H01L27/32

Abstract:
The present disclosure provides an array substrate, a manufacturing method of the array substrate, and a display device. The array substrate includes a hydrogen ion film formed between an active layer and a source/drain electrode of a low temperature poly-silicon thin film transistor, and a hole is formed in a region of the hydrogen ion film where a metal-oxide-semiconductor thin film transistor is disposed. Based on the hydrogen ion film, the electrical performance and stability of the low temperature poly-silicon thin film transistor are improved. Furthermore, hydrogen elements are not diffused to the region where the metal-oxide-semiconductor thin film transistor is disposed.
Public/Granted literature
- US20210358970A1 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE Public/Granted day:2021-11-18
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