Invention Grant
- Patent Title: Memory material, and memory device applying the same
-
Application No.: US16986316Application Date: 2020-08-06
-
Publication No.: US11355552B2Publication Date: 2022-06-07
- Inventor: Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.
Information query
IPC分类:
