Invention Grant
- Patent Title: Solid-state imaging element having a photoelectric conversion layer and a pair of electrodes
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Application No.: US17155632Application Date: 2021-01-22
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Publication No.: US11355555B2Publication Date: 2022-06-07
- Inventor: Toyotaka Kataoka , Keisuke Hatano , Kyosuke Ito
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2016-197151 20161005
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H04N9/04 ; H04N5/369 ; H01L51/42 ; H01L51/44 ; H04N5/378 ; H01L27/146 ; H04N5/374 ; H01L27/14

Abstract:
A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.
Public/Granted literature
- US20210143219A1 SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2021-05-13
Information query
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