A semiconductor device with a junction type FET includes: a drift layer; a channel layer on the drift layer; a source layer in a surface portion of the channel layer; a gate layer in the channel layer; a body layer in the channel layer; a drain layer disposed on an opposite side of the source layer with respect to the drift layer; a gate wiring electrically connected to the gate layer; a first electrode electrically connected to the source layer and the body layer; and a second electrode electrically connected to the drain layer.