Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16135482Application Date: 2018-09-19
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Publication No.: US11355593B2Publication Date: 2022-06-07
- Inventor: Takatomi Izumi , Junya Nishii , Yuhei Ikemoto
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu
- Agency: McGinn IP Law Group, PLLC
- Priority: JPJP2017-189645 20170929
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/28 ; H01L21/02 ; H01L29/417 ; H01L29/49 ; H01L29/423 ; H01L29/78 ; H01L29/51 ; H01L21/3205
Abstract:
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.
Public/Granted literature
- US20190103464A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-04
Information query
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