Invention Grant
- Patent Title: Diode
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Application No.: US16635319Application Date: 2018-07-23
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Publication No.: US11355594B2Publication Date: 2022-06-07
- Inventor: Kohei Sasaki
- Applicant: TAMURA CORPORATION , Novel Crystal Technology, Inc.
- Applicant Address: JP Tokyo; JP Saitama
- Assignee: TAMURA CORPORATION,Novel Crystal Technology, Inc.
- Current Assignee: TAMURA CORPORATION,Novel Crystal Technology, Inc.
- Current Assignee Address: JP Tokyo; JP Saitama
- Agency: Scully, Scott, Murphy & Pressure, PC
- Priority: JPJP2017-155768 20170810
- International Application: PCT/JP2018/027416 WO 20180723
- International Announcement: WO2019/031204 WO 20190214
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/24 ; H01L29/45 ; H01L29/47 ; H01L29/861 ; H01L29/872 ; H01L21/02 ; H01L21/443 ; H01L21/465
Abstract:
A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.
Public/Granted literature
- US20200168711A1 DIODE Public/Granted day:2020-05-28
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