Invention Grant
- Patent Title: Thin film transistor, method for preparing the same, display substrate and display device
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Application No.: US16760410Application Date: 2018-10-17
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Publication No.: US11355614B2Publication Date: 2022-06-07
- Inventor: Ji Zhang , Huiming Wang , Lin Chen , Jincheng Gao
- Applicant: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Hefei; CN Beijing
- Assignee: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Hefei; CN Beijing
- Agency: McCoy Russell LLP
- Priority: CN201810101958.8 20180201
- International Application: PCT/CN2018/110637 WO 20181017
- International Announcement: WO2019/148892 WO 20190808
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/02 ; H01L27/12 ; H01L29/51 ; H01L29/66

Abstract:
The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.
Public/Granted literature
- US20200343356A1 THIN FILM TRANSISTOR, METHOD FOR PREPARING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2020-10-29
Information query
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