Invention Grant
- Patent Title: Device and semiconductor structure for improving the disadvantages of p-GaN gate high electron mobility transistor
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Application No.: US16937298Application Date: 2020-07-23
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Publication No.: US11355625B2Publication Date: 2022-06-07
- Inventor: Chun-Chieh Yang , Yue-Ming Hsin , Yi-Nan Zhong , Yu-Chen Lai
- Applicant: Delta Electronics, Inc. , NATIONAL CENTRAL UNIVERSITY
- Applicant Address: TW Taoyuan; TW Jhongli
- Assignee: Delta Electronics, Inc.,NATIONAL CENTRAL UNIVERSITY
- Current Assignee: Delta Electronics, Inc.,NATIONAL CENTRAL UNIVERSITY
- Current Assignee Address: TW Taoyuan; TW Jhongli
- Agency: Muncy, Geissler, Olds & Lowe, PC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/20 ; H01L29/778 ; H01L29/205
Abstract:
A device includes a first transistor and a second transistor. The first transistor includes a first gate terminal coupled to the first source terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal coupled to the first drain terminal, a second source terminal, and a second drain terminal.
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