Invention Grant
- Patent Title: Semiconductor device and a method for fabricating the same
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Application No.: US16939655Application Date: 2020-07-27
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Publication No.: US11355638B2Publication Date: 2022-06-07
- Inventor: Yu-Lien Huang , Meng-Chun Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/66 ; H01L27/088 ; H01L21/768 ; H01L23/485 ; H01L29/417 ; H01L21/8234 ; H01L23/522 ; H01L23/532

Abstract:
A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
Information query
IPC分类: