Invention Grant
- Patent Title: Superconducting qubit devices based on metal silicides
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Application No.: US16811278Application Date: 2020-03-06
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Publication No.: US11355690B2Publication Date: 2022-06-07
- Inventor: Charles T. Black , Mingzhao Liu
- Applicant: Brookhaven Science Associates, LLC
- Applicant Address: US NY Upton
- Assignee: Brookhaven Science Associates, LLC
- Current Assignee: Brookhaven Science Associates, LLC
- Current Assignee Address: US NY Upton
- Agent Dorene M. Price
- Main IPC: H01L39/22
- IPC: H01L39/22 ; H01L39/24 ; B82Y40/00 ; G06N10/00 ; B82Y10/00 ; H01L39/02

Abstract:
A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.
Public/Granted literature
- US20200287119A1 Superconducting Qubit Devices Based On Metal Silicides Public/Granted day:2020-09-10
Information query
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