Invention Grant
- Patent Title: Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element
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Application No.: US17184206Application Date: 2021-02-24
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Publication No.: US11355698B2Publication Date: 2022-06-07
- Inventor: Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-232334 20151127,JP2016-053072 20160316,JP2016-056058 20160318,JPJP2016-210531 20161027,JPJP2016-210533 20161027
- Main IPC: G11C11/18
- IPC: G11C11/18 ; H01L43/06 ; H01L43/08 ; H03B15/00 ; G11B5/39 ; H01L29/82 ; H01L27/105 ; H01F10/32 ; G11C11/16 ; H01L43/04 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L43/14 ; G01R33/09

Abstract:
This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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