Invention Grant
- Patent Title: Integrated circuit
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Application No.: US17001282Application Date: 2020-08-24
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Publication No.: US11355701B2Publication Date: 2022-06-07
- Inventor: Wei-Hao Liao , Hsi-Wen Tien , Chih-Wei Lu , Pin-Ren Dai , Chung-Ju Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L27/22

Abstract:
An integrated circuit includes a substrate, a dielectric layer, an etch stop layer, a bottom electrode, a resistance switching element, and a top electrode. The dielectric layer is over the substrate. The etch stop layer is over the dielectric layer, in which the dielectric layer has a first portion directly under the etch stop layer. The bottom electrode penetrates through the etch stop layer and the dielectric layer, in which the dielectric layer has a second portion directly under the bottom electrode, and a top of the first portion of the dielectric layer is lower than a top of the second portion of the dielectric layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element.
Information query
IPC分类: