Invention Grant
- Patent Title: High throughput vacuum deposition sources and system
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Application No.: US17177070Application Date: 2021-02-16
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Publication No.: US11359284B2Publication Date: 2022-06-14
- Inventor: George Xinsheng Guo
- Applicant: Ascentool, Inc.
- Applicant Address: US CA Palo Alto
- Assignee: Ascentool, Inc.
- Current Assignee: Ascentool, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: SV Patent Service
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C16/458 ; C23C16/513 ; C23C16/46 ; C23C16/04 ; C23C16/50 ; C23C14/35 ; C23C16/455 ; H01J37/32 ; C23C14/04

Abstract:
A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.
Public/Granted literature
- US20210164099A1 High throughput Vacuum Deposition Sources and System Public/Granted day:2021-06-03
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