A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 μm from the first semiconductor contact area of the first conductivity type.