Invention Grant
- Patent Title: Etching method and etching apparatus
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Application No.: US17111582Application Date: 2020-12-04
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Publication No.: US11361973B2Publication Date: 2022-06-14
- Inventor: Yusuke Takino
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2019-221388 20191206
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01J37/32 ; H01L21/67
Abstract:
An etching method includes preparing a substrate having a processing target film, multiple core members formed on the processing target film, and a first film covering the multiple core members and the processing target film exposed between the multiple core members; forming a second film on a surface of the first film by a first gas; etching the first film by plasma of a second gas while allowing the second film to be left on a portion of the first film corresponding to a side surface of each core member; and repeating the forming of the second film and the etching of the first film.
Public/Granted literature
- US20210175090A1 ETCHING METHOD AND ETCHING APPARATUS Public/Granted day:2021-06-10
Information query
IPC分类:
