Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16425369Application Date: 2019-05-29
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Publication No.: US11362024B2Publication Date: 2022-06-14
- Inventor: Hisashi Shimura , Yoshiyasu Kuwabara
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Kanagawa
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Kanagawa
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JPJP2018-103823 20180530,JPJP2019-035716 20190228
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L29/267 ; H01L29/78 ; H01L21/56 ; H01L23/31
Abstract:
A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.
Information query
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