Invention Grant
- Patent Title: Light-emitting diode device
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Application No.: US16878290Application Date: 2020-05-19
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Publication No.: US11362074B2Publication Date: 2022-06-14
- Inventor: Shunyi Chen , Junpeng Shi , Weng-Tack Wong , Chen-ke Hsu , Chih-Wei Chao
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Thomas | Horstemeyer, LLP
- Priority: CN201721568219.7 20171122
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L33/62 ; H01L33/60 ; H01L33/48

Abstract:
A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
Public/Granted literature
- US20200279838A1 LIGHT-EMITTING DIODE DEVICE Public/Granted day:2020-09-03
Information query
IPC分类: