Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US17185995Application Date: 2021-02-26
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Publication No.: US11362102B1Publication Date: 2022-06-14
- Inventor: Chia-Wen Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L27/11568
- IPC: H01L27/11568 ; H01L29/66 ; H01L29/792
Abstract:
A semiconductor device includes a substrate having thereon at least one active area and at least one trench isolation region adjacent to the at least one active area. A charge trapping structure is disposed on the at least one active area and at least one trench isolation region. At least one divot is disposed in the at least one trench isolation region adjacent to the charge trapping structure. A silicon oxide layer is disposed in the at least one divot. A gate oxide layer is disposed on the at least one active area around the charge trapping structure.
Information query
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