A light emitting device includes a vertical stack of a light emitting diode and a field effect transistor that controls the light emitting diode. An isolation layer is present between the light emitting diode and the field effect transistor, and an electrically conductive path electrically shorts a node of the light emitting diode to a node of the field effect transistor. The field effect transistor may include an indium gallium zinc oxide (IGZO) channel and may be located over the isolation layer. Alternatively, the field effect transistor may be a high-electron-mobility transistor (HEMT) including an epitaxial semiconductor channel layer and the light emitting diode may be located over the HEMT.