- Patent Title: Local metallization for semiconductor substrates using a laser beam
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Application No.: US16376802Application Date: 2019-04-05
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Publication No.: US11362220B2Publication Date: 2022-06-14
- Inventor: Pei Hsuan Lu , Benjamin I. Hsia , David Aaron R. Barkhouse , Lee Gorny
- Applicant: SunPower Corporation
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/18 ; H01L31/0368

Abstract:
Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.
Public/Granted literature
- US20190312156A1 LOCAL METALLIZATION FOR SEMICONDUCTOR SUBSTRATES USING A LASER BEAM Public/Granted day:2019-10-10
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