Invention Grant
- Patent Title: Local patterning and metallization of semiconductor structures using a laser beam
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Application No.: US16377102Application Date: 2019-04-05
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Publication No.: US11362234B2Publication Date: 2022-06-14
- Inventor: Pei Hsuan Lu , Benjamin I. Hsia , Taeseok Kim
- Applicant: SunPower Corporation
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/0236 ; H01L31/0216 ; B23K26/382

Abstract:
Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
Public/Granted literature
- US20190312173A1 LOCAL PATTERNING AND METALLIZATION OF SEMICONDUCTOR STRUCTURES USING A LASER BEAM Public/Granted day:2019-10-10
Information query
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