A phase-change material having specific SiOx doping into special Ge-rich GexSbyTez material is described. Integrated circuits using this phase-change material as memory elements in a memory array can pass the solder bonding criteria mentioned above, while exhibiting good set speeds and demonstrating good 10 year data retention characteristics. A memory cell described herein comprises a first electrode and a second electrode; and a memory element in electrical series between the first and second electrode. The memory element comprises a GexSbyTez phase change material with a silicon oxide additive, including a combination of elements having Ge in a range of 28 to 36 at %, Sb in a range of 10 to 20 at %, Te in a range of 25 to 40 at %, Si in a range of 5 to 10 at %, and O in a range of 12 to 23 at %.