Invention Grant
- Patent Title: Interlayers and associated systems, devices, and methods
-
Application No.: US16427192Application Date: 2019-05-30
-
Publication No.: US11362293B2Publication Date: 2022-06-14
- Inventor: Marc A. Baldo , Tony Wu , Markus Einzinger
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L51/42
- IPC: H01L51/42 ; H01L51/00 ; H01L51/44 ; H01L31/0224 ; H01L31/055

Abstract:
Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.
Information query
IPC分类: