Bulk acoustic wave resonator with a heatsink region and electrical insulator region
Abstract:
Certain aspects of the present disclosure provide a bulk acoustic wave (BAW) resonator having a substrate with a heatsink region and an electrical insulator region. An example electroacoustic device generally includes a piezoelectric layer, a first electrode structure, a second electrode structure, one or more reflector layers, and a substrate having a heatsink region and an electrical insulator region. The heatsink region is arranged under a first portion of the first electrode structure, the first portion of the first electrode structure overlapping the second electrode structure. The insulator region is arranged under a second portion of the first electrode structure, the second portion of the first electrode structure being adjacent to the first portion of the first electrode structure.
Information query
Patent Agency Ranking
0/0