Invention Grant
- Patent Title: Pixel circuit for an ultra-low power image sensor
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Application No.: US17258938Application Date: 2019-07-09
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Publication No.: US11363223B2Publication Date: 2022-06-14
- Inventor: Pascal Heim , Pierre-François Rüedi , Riccardo Quaglia , Engin Türetken , Pascal Nussbaum
- Applicant: CSEM Centre Suisse d'Electronique et de Microtechnique SA—Recherche et Développement
- Applicant Address: CH Neuchâtel
- Assignee: CSEM Centre Suisse d'Electronique et de Microtechnique SA—Recherche et Développement
- Current Assignee: CSEM Centre Suisse d'Electronique et de Microtechnique SA—Recherche et Développement
- Current Assignee Address: CH Neuchâtel
- Agency: Pearne & Gordon LLP
- Priority: EP8182685 20180710
- International Application: PCT/IB2019/055834 WO 20190709
- International Announcement: WO2020/012353 WO 20200116
- Main IPC: H04N5/369
- IPC: H04N5/369 ; H04N5/355 ; H04N5/3745 ; H04N5/378

Abstract:
A pixel circuit for a ultra-low power image sensor, including: an integration node, on which a photodiode current is integrated, a comparator arranged to compare a voltage at the integration node with a reference voltage, a n+1 bits digital memory, a writing pulse signal generator arranged to generate a writing pulse signal, on the basis of the comparator output voltage and on the voltage at a memory node, the start of the pulse triggering the writing of the digital word in the n-bits digital memory part. The comparator includes a switch in series with a current source and arranged to be commanded by the voltage at the memory node so that the switch is open at the end of the pulse, so as to drastically limit the consumption of static power of the pixel circuit during the integration phase.
Public/Granted literature
- US20210344858A1 PIXEL CIRCUIT FOR AN ULTRA-LOW POWER IMAGE SENSOR Public/Granted day:2021-11-04
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