Invention Grant
- Patent Title: Integrated circuit structure and memory
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Application No.: US17197051Application Date: 2021-03-10
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Publication No.: US11367478B2Publication Date: 2022-06-21
- Inventor: Liang Zhang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton, LLP
- Priority: CN202010036697.X 20200114,CN202020082043.X 20200114
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/4093 ; H01L23/00

Abstract:
The embodiments provide an integrated circuit structure and a memory, and relates to the field of semiconductor memory technologies. The integrated circuit structure includes: a pad region, including a plurality of signal pads arranged along a target direction; and a circuit region arranged on one side of the pad region. The circuit region includes a plurality of input/output circuit modules arranged along the target direction and correspondingly connected to the signal pads. Each of the input/output circuit modules is configured to implement a sampling operation of an input signal and write a sampling result into a storage array, and read data stored in the storage array. A size of the circuit region along the target direction is smaller than that of the pad region along the target direction. According to the present disclosure, the performance of a write operation can be improved for the memory.
Public/Granted literature
- US20210217462A1 INTEGRATED CIRCUIT STRUCTURE AND MEMORY Public/Granted day:2021-07-15
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