Invention Grant
- Patent Title: Thin film transistor, fabricating method thereof, and display apparatus
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Application No.: US16971085Application Date: 2019-11-01
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Publication No.: US11367792B2Publication Date: 2022-06-21
- Inventor: Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE Technology Group Co., Ltd.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE Technology Group Co., Ltd.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: WHDA, LLP
- International Application: PCT/CN2019/115088 WO 20191101
- International Announcement: WO2021/081992 WO 20210506
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L29/00 ; H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L21/02 ; H01L29/66 ; H01L27/32
Abstract:
The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
Public/Granted literature
- US20210135012A1 THIN FILM TRANSISTOR, FABRICATING METHOD THEREOF, AND DISPLAY APPARATUS Public/Granted day:2021-05-06
Information query
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