Invention Grant
- Patent Title: Capacitance sensor circuit and semiconductor integrated circuit
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Application No.: US16795537Application Date: 2020-02-19
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Publication No.: US11368128B2Publication Date: 2022-06-21
- Inventor: Masayuki Otsuka
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: JCIPRNET
- Priority: JPJP2019-029381 20190221
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/45 ; G01K3/00 ; G01K7/34

Abstract:
A capacitance sensor circuit is provided, including: a capacitance variable capacitor changing from a first capacitance to a second capacitance corresponding to environmental change; a reference capacitor; and an amplifier circuit charging the capacitance variable capacitor via a first node and the reference capacitor via a second node, and outputting a determination signal. In the amplifier circuit, a differential amplification part generates a potential difference signal obtained by amplifying the potential difference between the first and the second nodes; an output part outputs the determination signal based on the potential difference signal; and when the difference between the increase degrees of the potentials of the first and the second nodes is less than a predetermined value, the output part holds and outputs the determination signal immediately before that state and a bias control part stops a current flowing through the differential amplification part.
Public/Granted literature
- US20200274498A1 CAPACITANCE SENSOR CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2020-08-27
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