Invention Grant
- Patent Title: Boost schemes for write assist
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Application No.: US16662433Application Date: 2019-10-24
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Publication No.: US11373702B2Publication Date: 2022-06-28
- Inventor: Wei-Jer Hsieh , Chiting Cheng , Yangsyu Lin , Shang-Chi Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C11/41
- IPC: G11C11/41 ; G11C11/419 ; G11C7/12 ; G11C11/408 ; G11C11/4096 ; H01L23/522 ; G11C8/08

Abstract:
A write assist circuit is provided. The write assist circuit includes a transistor switch coupled between a bit line voltage node of a cell array and a ground node. An invertor is operative to receive a boost signal responsive to a write enable signal. An output of the invertor is coupled to a gate of the transistor switch. The write assist circuit further includes a capacitor having a first end coupled to the bit line voltage node and a second end coupled to the gate node. The capacitor is operative to drive a bit line voltage of the bit line voltage node to a negative value from the ground voltage in response to the boost signal.
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