Invention Grant
- Patent Title: Semiconductor surface smoothing and semiconductor arrangement
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Application No.: US16411784Application Date: 2019-05-14
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Publication No.: US11373857B2Publication Date: 2022-06-28
- Inventor: Bernhard Goller , Iris Moder , Petra Fischer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Cooper Legal Group LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; H01L21/306 ; H01L21/3063 ; H01L21/304 ; H01L21/3065
Abstract:
One or more semiconductor manufacturing methods and/or semiconductor arrangements are provided. In an embodiment, a silicon carbide (SiC) layer is provided. The SiC layer has a first portion overlying a second portion. The first portion has a first side distal the second portion and a second side proximal the second portion. The first portion is converted into a porous layer overlying the second portion. The porous layer has a first side distal the second portion and a second side proximal the second portion. The porous layer is removed to expose a first side of the second portion. After removing the porous layer, the first side of the second portion has a surface roughness less than a surface roughness of the first side of the first portion and/or less than a surface roughness of the first side of the porous layer.
Information query
IPC分类:
