Invention Grant
- Patent Title: Through electrode substrate, method of manufacturing through electrode substrate, and mounting substrate
-
Application No.: US17178659Application Date: 2021-02-18
-
Publication No.: US11373906B2Publication Date: 2022-06-28
- Inventor: Shinji Maekawa , Hiroshi Kudo , Takamasa Takano , Hiroshi Mawatari , Masaaki Asano
- Applicant: DAI NIPPON PRINTING CO., LTD.
- Applicant Address: JP Tokyo-to
- Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee Address: JP Tokyo-to
- Agency: Oliff PLC
- Priority: JP2016-170015 20160831
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L21/3205 ; H01L23/13 ; H01L23/14 ; H01L23/532 ; H05K1/11 ; H01L23/522 ; H01L23/12 ; H05K3/40

Abstract:
A method of manufacturing a through electrode substrate, the method includes: preparing a substrate including a first surface positioned on a first side, and a second surface positioned on a second side opposite to the first side, the substrate being provided with a through hole; forming a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on the first surface of the substrate and connected to the sidewall portion; forming an organic film inside the through hole; forming an inorganic film at least partially covering the first portion of the through electrode from the first side; forming an insulation layer positioned to the first side of the inorganic film; and forming an electroconductive layer passing through the inorganic film and the insulation layer so as to be connected to the first portion of the through electrode.
Public/Granted literature
- US20210175121A1 THROUGH ELECTRODE SUBSTRATE, METHOD OF MANUFACTURING THROUGH ELECTRODE SUBSTRATE, AND MOUNTING SUBSTRATE Public/Granted day:2021-06-10
Information query
IPC分类: