Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17020435Application Date: 2020-09-14
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Publication No.: US11373937B2Publication Date: 2022-06-28
- Inventor: Haruhiko Iwabuchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2020-049744 20200319
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/00

Abstract:
A semiconductor device according to an embodiment comprises a semiconductor element, a first terminal, a plurality of second terminals, and an encloser. The semiconductor element is rectangular. The first terminal has an upper surface to which a back surface of the semiconductor element is bonded. The second terminals are arranged around the first terminal. The second terminals are arranged at four corners of the encloser to be exposed from the bottom surface, and sides of the semiconductor element are opposed to the first side, the second side, the third side, and the fourth side, respectively. The first terminal is apart from the first side surface and the third side surface, a lower surface of the first terminal is exposed from the bottom surface, and the first terminal is partly exposed from the second side surface and the fourth side surface.
Public/Granted literature
- US20210296215A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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