Invention Grant
- Patent Title: Sense MOSFET electrically connected to a source pad via a plurality of source extraction ports
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Application No.: US17068446Application Date: 2020-10-12
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Publication No.: US11373941B2Publication Date: 2022-06-28
- Inventor: Yoshimasa Uchinuma , Yusuke Ojima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L21/00 ; H05K7/18 ; H01L23/31 ; H01L27/088 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor chip, first and second source terminals and a Kelvin terminal, wherein the semiconductor chip includes a first source electrode coupled to the first source terminal through a first connecting portion, a second source electrode coupled to the second source terminal through a second connecting portion, a Kelvin pad coupled to the Kelvin terminal and formed independently of the first source electrode, a power MOSFET that has a source coupled to the first source electrode, a sense MOSFET that has a source coupled to the second source electrode, a source pad formed on a portion of the first source electrode and coupled to the first connecting portion, a plurality of source potential extraction ports formed around a connection point between the first connecting portion and the source pad and a plurality of wires coupled between the source potential extraction ports and the Kelvin pad.
Public/Granted literature
- US20220115306A1 SEMICONDUCTOR DEVICE AND CONTROL SYSTEM Public/Granted day:2022-04-14
Information query
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