A manufacturing method of a semiconductor structure includes at least the following steps. Forming a first portion includes forming a first patterned conductive pad with a first through hole on a first interconnect structure over a first semiconductor substrate; patterning a dielectric material over the first interconnect structure to form a first patterned dielectric layer with a first opening that passes through a portion of the dielectric material formed inside the first through hole to accessibly expose the first interconnect structure; and forming a conductive material inside the first opening and in contact with the first interconnect structure to form a first conductive connector laterally isolated from the first patterned conductive pad by the first patterned dielectric layer. A singulation process is performed to cut off the first patterned dielectric layer, the first interconnect structure, and the first semiconductor substrate to form a continuous sidewall of a semiconductor structure.