Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16931598Application Date: 2020-07-17
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Publication No.: US11374018B2Publication Date: 2022-06-28
- Inventor: Teng-Hao Yeh , Hang-Ting Lue , Chih-Wei Hu
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/11573
- IPC: H01L27/11573 ; H01L27/11524 ; H01L27/11556 ; H01L23/522 ; H01L27/1157 ; H01L27/11582 ; H01L23/528 ; H01L27/11529
Abstract:
A semiconductor structure includes a stack of memory cells and a CMOS structure. The CMOS structure is located below the stack of memory cells. The CMOS structure includes a source line transistor and a bit line transistor.
Public/Granted literature
- US20220020761A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2022-01-20
Information query
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