The present invention reduces a circuit scale of a driving circuit while maintaining a characteristic of the driving circuit. In a driving circuit of the present invention, a transistor (TRc) including a gate electrode, a semiconductor film (HF), and first and second conductive electrodes (S, D) is provided on an upper side of the substrate. The driving circuit further includes a first conductive film (21) provided in a layer lower than the gate electrode, a second conductive film (22) that serves as the gate electrode, and a first capacitor (C1) defined between the first conductive film (21) and the second conductive film (22).