An apparatus for vialess transitions can include a first dielectric layer. The apparatus can also include a first conductor forming a first coupling element on the top surface of the first dielectric layer. The apparatus can further include a second dielectric layer positioned below the first dielectric layer and above a third dielectric layer, wherein the second dielectric layer is vialess. The apparatus can include a second conductor forming a second coupling element, wherein the second conductor is on the top surface of the third dielectric layer, and a portion of the first coupling element is directly above a portion of the second coupling element.