Circuits for providing overcurrent protection are disclosed herein. The circuits feature depletion mode MOSFETs connected to resistive elements, preferably, Positive Temperature Coefficient (PTC) devices, configured in such a way so that the voltage across the PTC device is the same as the gate-to-source voltage of the MOSFET. The circuit may further be configured using a TVS diode, for clamping the drain-to-source voltage of the MOSFET during the overcurrent events. Heat transfer between the MOSFET and the PTC device facilitates overcurrent protection. A two-terminal device including a depletion mode MOSFET, a PTC device, and a TVS diode may provide overcurrent protection to other circuits. A bidirectional circuit c including two MOSFETS disposed on either side of a PTC is also contemplated for AC voltage overcurrent protection.