Invention Grant
- Patent Title: Physically unclonable function device
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Application No.: US17413459Application Date: 2019-11-28
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Publication No.: US11374569B2Publication Date: 2022-06-28
- Inventor: Nicolas Borrel , Jimmy Fort , Mathieu Lisart
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1872826 20181213
- International Application: PCT/FR2019/000193 WO 20191128
- International Announcement: WO2020/120847 WO 20200618
- Main IPC: H03K5/22
- IPC: H03K5/22 ; H03K19/003 ; H03K19/00 ; H03K19/17736 ; H03F3/45 ; H03L7/097 ; H04L9/32

Abstract:
The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.
Information query
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