Invention Grant
- Patent Title: Pattern formation material and pattern formation method
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Application No.: US15919443Application Date: 2018-03-13
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Publication No.: US11378885B2Publication Date: 2022-07-05
- Inventor: Koji Asakawa , Naoko Kihara , Seekei Lee , Norikatsu Sasao , Tomoaki Sawabe , Shinobu Sugimura
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner L.L.P.
- Priority: JPJP2017-179536 20170919
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/031 ; G03F7/40 ; G03F7/038 ; G03F7/027 ; G03F7/00

Abstract:
According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.
Public/Granted literature
- US20190086805A1 PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD Public/Granted day:2019-03-21
Information query
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