Invention Grant
- Patent Title: Method for removing resist layer, and method of manufacturing semiconductor
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Application No.: US17035763Application Date: 2020-09-29
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Publication No.: US11378886B2Publication Date: 2022-07-05
- Inventor: Hung-Jui Kuo , Hui-Jung Tsai , Tai-Min Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/56
- IPC: H01L21/56 ; G03F7/42 ; H01L23/538 ; H01L23/00 ; H01L21/683 ; H01L21/48 ; H01L23/31
Abstract:
A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.
Public/Granted literature
- US20220100097A1 METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR Public/Granted day:2022-03-31
Information query
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