- Patent Title: Semiconductor device and power off method of a semiconductor device
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Application No.: US16933270Application Date: 2020-07-20
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Publication No.: US11379028B2Publication Date: 2022-07-05
- Inventor: Ho-Yeon Jeon , Dae Hwan Kim , Young Hoon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0108758 20170828
- Main IPC: G06G1/00
- IPC: G06G1/00 ; G06F1/28 ; G06F1/26 ; G11C5/14 ; G06F1/3203 ; G06F1/30

Abstract:
A semiconductor device and a power-off method of the semiconductor device, the semiconductor device including a first power source group including first and second power sources, a second power source group including a third power source and a power sequence controller. The power sequence controller performs power-on operations and power-off operations of the first to third power sources. The power sequence controller starts a power-off operation of the first power source group at a first time, and starts a power-off operation of the second power source group when the power voltage of the first power source group becomes a first voltage or when a first reference time has passed from the first time.
Public/Granted literature
- US20200348741A1 SEMICONDUCTOR DEVICE AND POWER OFF METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2020-11-05
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