Invention Grant
- Patent Title: Semiconductor device including memory cells and method for manufacturing thereof
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Application No.: US16427292Application Date: 2019-05-30
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Publication No.: US11380369B2Publication Date: 2022-07-05
- Inventor: Hung-Li Chiang , Yu-Sheng Chen , Chao-Ching Cheng , Tzu-Chiang Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/11592
- IPC: H01L27/11592 ; G11C5/06 ; H01L27/1159 ; G11C11/22 ; H01L45/00 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/24 ; H01L27/22 ; H01L27/11597 ; G11C11/16

Abstract:
A semiconductor device includes logic circuitry including a transistor disposed over a substrate, multiple layers each including metal wiring layers and an interlayer dielectric layer, respectively, disposed over the logic circuitry, and memory arrays. The multiple layers of metal wiring include, in order closer to the substrate, first, second, third and fourth layers, and the memory arrays include lower multiple layers disposed in the third layer.
Public/Granted literature
- US20200176032A1 SEMICONDUCTOR DEVICE INCLUDING MEMORY CELLS AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2020-06-04
Information query
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