Invention Grant
- Patent Title: Semiconductor device having a charge pump
-
Application No.: US16646503Application Date: 2017-09-22
-
Publication No.: US11380370B2Publication Date: 2022-07-05
- Inventor: Jun Wu , Dong Pan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/CN2017/102907 WO 20170922
- International Announcement: WO2019/056294 WO 20190328
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4074 ; G11C16/30 ; H02M3/07

Abstract:
Apparatus and methods that have a semiconductor charge pump can be implemented in a variety of applications. Such a charge pump can have a charge pump unit core that includes a pump section and a single passgate coupled to the pump section to transfer charge, where the single passgate is a n-channel metal-oxide semiconductor (NMOS) transistor coupled directly to an input and an output of the charge pump unit core. The transfer of charge can be based on a set of clock signals. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20200273502A1 SEMICONDUCTOR DEVICE HAVING A CHARGE PUMP Public/Granted day:2020-08-27
Information query